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BSS119L6433HTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119L6433HTMA1
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119L6433HTMA1
Single FETs, MOSFETs Overview
The BSS119 is an N-Channel SIPMOS small-signal transistor in a PG-SOT23 package. It features a drain-source breakdown voltage of 100 V, a continuous drain current of 0.17 A at 25°C, and a maximum on-state resistance of 6 Ω at VGS=10V. The device operates within a temperature range of -55 to +150 °C and includes dv/dt rating capabilities.
Single FETs, MOSFETs Feature Summary
- Enhancement mode logic level operation
- dv/dt rated for high-speed switching applications
- SIPMOS technology for robust performance
Single FETs, MOSFETs Applications
- Low-side switching
- Logic level translation
- Small signal amplification
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6433HTMA1 against official Infineon documentation to confirm tape and reel specifications. Ensure compatibility with standard SMT assembly processes for the PG-SOT23 footprint. Confirm RoHS compliance status through the manufacturer's material declaration.
Single FETs, MOSFETs Selection Notes
Select this component for low-power switching tasks requiring high voltage isolation up to 100 V. Consider the thermal resistance characteristics when designing for ambient temperatures exceeding 25°C. Evaluate gate charge requirements for driving circuits operating at specified logic levels.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor portfolio. It utilizes planar trench technology optimized for low-cost, high-volume consumer and industrial applications. The PG-SOT23 package provides a compact solution for surface-mount designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may not match the specific dv/dt ratings or thermal characteristics.
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