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BSS119NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190MA SOT23-3. Review the specifications below when checking this part for your BOM.
The BSS119NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ Small-Signal-Transistor series. It features a 100 V drain-source breakdown voltage and a continuous drain current of 0.19 A at 25 °C. The device has a maximum on-state resistance of 6 Ω at VGS=10 V and 10 Ω at VGS=4.5 V. It operates within a temperature range of -55 °C to +150 °C, dissipates up to 0.5 W, and includes avalanche rating capabilities.
Verify the specific ordering suffix H6327XTSA1 matches the required tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Ensure the requested quantity aligns with the standard factory packing size of 3000 pieces per reel.
Select this component when a small-signal N-channel MOSFET with high voltage tolerance is required. The logic-level gate threshold allows efficient operation with 4.5 V control signals. Consider the thermal resistance and power dissipation limits for the intended operating environment.
This part belongs to Infineon's OptiMOS™ Small-Signal-Transistor family, designed for compact designs requiring high efficiency. The BSS119N variant specifically targets applications needing reliable switching performance in a minimal footprint SOT-23 package.
Consult official documentation for confirmed substitute part numbers before implementation.
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