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BSS123 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123
- Description：N-CHANNEL ENHANCEMENT MODE MOSFE
- Series：-
- Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：14 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123
Single FETs, MOSFETs Overview
The BSS123 is an N-channel enhancement mode MOSFET manufactured by Anbon Semiconductor. It utilizes advanced trench process technology to provide voltage-controlled small signal switching capabilities. The device features a maximum drain-source voltage of 100V and a continuous drain current of 0.2A. Key electrical parameters include a maximum on-resistance of 5.0Ω at VGS=10V and 5.5Ω at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C, with a power dissipation rating of 0.35W.
Single FETs, MOSFETs Feature Summary
- Advanced trench process technology for optimized performance
- Voltage-controlled small signal switching functionality
- High breakdown voltage capability suitable for robust applications
Single FETs, MOSFETs Applications
- Small servo motor controls
- Power MOSFET gate drivers
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation carefully, as the BSS123 part number is widely produced by multiple semiconductor vendors including onsemi. Confirm that the specific datasheet provided matches the required electrical tolerances and package dimensions before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for low-power switching tasks requiring high voltage isolation up to 100V. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Ensure the gate drive voltage aligns with the specified threshold characteristics for optimal on-resistance performance.
Single FETs, MOSFETs Part Context
This component belongs to the category of N-channel enhancement mode MOSFETs designed for surface mount applications. It is housed in a SOT-23 package, making it suitable for compact circuit designs where space constraints are critical. The device serves as a fundamental building block for various electronic control systems.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other manufacturers' BSS123 variants to ensure pinout compatibility and electrical parameter alignment. Verify package dimensions and marking codes to prevent assembly errors during replacement procedures.
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