ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSS123-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123-7-F
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123-7-F
Single FETs, MOSFETs Overview
The BSS123-7-F is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes advanced trench technology to minimize on-state resistance while providing rugged and fast switching performance. The device features a drain-source voltage rating of 100V, a continuous drain current of 0.17A at +25°C, and a maximum static drain-source on-resistance of 6.0Ω at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and is housed in a surface-mount SOT23 package.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for minimized on-state resistance
- Fast switching speed with low input/output leakage
- Totally lead-free and fully RoHS compliant
- Qualified to JEDEC standards for high reliability
Single FETs, MOSFETs Applications
- Small servo motor controls
- Power MOSFET gate drivers
- Low-voltage switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit tape and reel carrier configuration as documented in the official datasheet. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen/antimony-free requirements, prior to final procurement authorization.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, low-current applications requiring fast switching and rugged performance. Ensure the design accommodates the specified 100V drain-source voltage and 0.17A continuous current limits. Verify that the SOT23 package dimensions and thermal characteristics align with the target PCB layout and operating temperature constraints.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123 series of N-channel enhancement mode field effect transistors. It is distinct from automotive-compliant variants such as the BSS123Q, which are produced under separate datasheets. The standard BSS123-7-F is designed for general-purpose low-voltage applications utilizing Diodes Incorporated's proprietary trench technology.
Single FETs, MOSFETs Replacement Considerations
Consult the official datasheet for equivalent circuit topologies and pin configurations when evaluating potential substitutes. Verify that any replacement component matches the 100V drain-source voltage and 0.17A continuous current ratings to ensure functional compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
