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BSS123ATC is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123ATC
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123ATC
Single FETs, MOSFETs Overview
The BSS123ATC is an N-channel enhancement mode vertical DMOS FET manufactured by Diodes Incorporated. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at 25°C ambient temperature. The device exhibits a maximum gate-source threshold voltage of 2.0V and a static on-state resistance of 6Ω at VGS=10V. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Vertical DMOS technology for high-density applications
- Low gate threshold voltage for logic compatibility
- Lead-free, halogen, and antimony-free construction
Single FETs, MOSFETs Applications
- Small servo motor control
- Power MOSFET gated drivers
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'ATC' against the manufacturer's official documentation to confirm package type and marking details. Ensure compliance with RoHS directives and AEC-Q101 standards if automotive qualification is required. Confirm moisture sensitivity level and storage conditions prior to assembly.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, low-current switching tasks requiring fast response times. Evaluate thermal dissipation requirements as power dissipation is limited to 360mW. Consider input capacitance values when designing high-frequency drive circuits to ensure adequate switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123 family of N-channel enhancement mode field effect transistors. These devices are designed using advanced trench technology to minimize on-state resistance while providing rugged performance. They are suitable for applications where small signal amplification or switching is needed in compact surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other manufacturers offering identical pinouts and electrical specifications. Verify that substitute parts meet the same 100V breakdown voltage and SOT-23 package constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
