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BSS123IXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is 100V N-CH SMALL SIGNAL MOSFET IN. Review the specifications below when checking this part for your BOM.
The BSS123IXTMA1 is an N-channel OptiMOS small-signal MOSFET in a PG-SOT23-3 package. It features a drain-source voltage of 100 V and a continuous drain current of 0.19 A at 25°C. The maximum on-state resistance is 6 Ω at VGS=10 V and 10 Ω at VGS=4.5 V. Total gate charge is typically 0.63 nC, with a threshold voltage range of 0.8 V to 1.8 V. Power dissipation is rated at 0.5 W, operating between -55°C and 150°C.
Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm packaging format and reel specifications. Ensure the component matches the PG-SOT23-3 footprint requirements for your PCB layout. Cross-reference the datasheet revision date to validate electrical characteristics against your design timeline.
Select this component when a 100 V rating and low gate charge are required for small-signal applications. The SOT-23 package suits space-constrained designs. Verify that the 0.19 A continuous current limit meets load requirements. Consider thermal derating if ambient temperatures exceed standard conditions.
This part belongs to the BSS123I series of OptiMOS transistors. It utilizes Infineon's silicon technology for small-signal power management. The device is designed for general-purpose switching tasks within industrial and consumer markets.
BSS123NH6433XTMA1 (OptiMOS series, SOT-23 package)
The device is classified as HBM class 0 (<250V) according to JESD22-A114.
Yes, it supports a single pulse avalanche energy of 2.0 mJ under specified test conditions.
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