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BSS123K-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 230MA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123K-7
- Description：MOSFET N-CH 100V 230MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123K-7
Single FETs, MOSFETs Overview
The BSS123K-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes advanced trench technology to minimize on-state resistance while providing rugged and fast switching performance. The device features a low gate threshold voltage, low input capacitance, and high drain-source voltage rating. It is designed for low voltage, low current applications and is available in a SOT-23 surface mount package.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for minimized on-state resistance
- Low gate threshold voltage and low input capacitance
- Fast switching speed with high drain-source voltage rating
Single FETs, MOSFETs Applications
- Small servo motor control
- Power MOSFET gated drivers
- Switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm packaging quantity and qualification level. Ensure the component matches the required SOT-23 form factor and electrical specifications for the target circuit design before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for low voltage, low current switching tasks requiring fast response times. The low gate threshold facilitates direct logic-level interfacing. Verify thermal management requirements as power dissipation capabilities are limited by the small surface mount package size.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching and amplification in compact electronic designs where space constraints and efficiency are critical factors.
Single FETs, MOSFETs Replacement Considerations
Compatible substitutes include BSS123K-13 and BSS123Q-7 from Diodes Incorporated. Other manufacturers offer equivalent N-channel MOSFETs in SOT-23 packages with similar VDS and RDS(ON) characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
