Single FETs, MOSFETs BSS123L product image

BSS123L

$0.17
  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e744ef3f32b4 Category: Brand:

  
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BSS123L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123L

  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:21.5 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123L

BSS123L

Single FETs, MOSFETs Overview

The BSS123L is an N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in a surface-mount SOT-23 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 170 mA at 25°C. The device exhibits a maximum on-resistance of 6 ohms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 225 mW.

Single FETs, MOSFETs Feature Summary

  • Logic-level compatible operation for direct interface with standard logic outputs
  • ESD protection capabilities against human body model and machine model discharges
  • Lead-free construction compliant with RoHS environmental standards

Single FETs, MOSFETs Applications

  • Load switching applications requiring low current control
  • Battery protection circuits for portable devices
  • General purpose switching in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation when ordering, as variations such as LT1G indicate tape and reel packaging configurations. Confirm that the required ESD handling protocols are integrated into the assembly process due to the sensitivity of the gate terminal. Ensure the selected variant meets the specific automotive or industrial qualification requirements if applicable to the target deployment environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact N-channel switch with moderate voltage blocking capability. The high on-resistance limits suitability for high-current loads, making it appropriate for signal routing or low-power load management. Evaluate thermal constraints carefully given the small package size and limited power dissipation rating under ambient conditions.

Single FETs, MOSFETs Part Context

This device belongs to the BSS123 family of small-signal MOSFETs manufactured by onsemi. It utilizes silicon technology optimized for cost-effective mass production in surface-mount assemblies. The part shares functional similarities with other industry-standard logic-level FETs but is distinguished by its specific onsemi manufacturing processes and PowerTrench architecture.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with BSS123LT1G for identical electrical specifications and packaging. Verify pinout compatibility before substituting with equivalent parts from other manufacturers.

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