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BSS123L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
The BSS123L is an N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in a surface-mount SOT-23 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 170 mA at 25°C. The device exhibits a maximum on-resistance of 6 ohms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 225 mW.
Verify the specific suffix designation when ordering, as variations such as LT1G indicate tape and reel packaging configurations. Confirm that the required ESD handling protocols are integrated into the assembly process due to the sensitivity of the gate terminal. Ensure the selected variant meets the specific automotive or industrial qualification requirements if applicable to the target deployment environment.
Select this component for designs requiring a compact N-channel switch with moderate voltage blocking capability. The high on-resistance limits suitability for high-current loads, making it appropriate for signal routing or low-power load management. Evaluate thermal constraints carefully given the small package size and limited power dissipation rating under ambient conditions.
This device belongs to the BSS123 family of small-signal MOSFETs manufactured by onsemi. It utilizes silicon technology optimized for cost-effective mass production in surface-mount assemblies. The part shares functional similarities with other industry-standard logic-level FETs but is distinguished by its specific onsemi manufacturing processes and PowerTrench architecture.
Cross-reference with BSS123LT1G for identical electrical specifications and packaging. Verify pinout compatibility before substituting with equivalent parts from other manufacturers.
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