Single FETs, MOSFETs BSS123L6327HTSA1 product image

BSS123L6327HTSA1

$0.28
  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:60b38a352932 Category: Brand:

  
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BSS123L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123L6327HTSA1

  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:1.8V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123L6327HTSA1

BSS123L6327HTSA1

Single FETs, MOSFETs Overview

The Infineon BSS123L6327HTSA1 is a SIPMOS N-channel enhancement mode small-signal transistor in an SOT-23 package. It features a drain-source voltage of 100 V and a continuous drain current of 0.17 A at 25°C. The device has a maximum on-state resistance of 6 Ω at VGS=10V and 10 Ω at VGS=4.5V, with a gate threshold voltage range of 0.8 to 2.0 V. Operating temperature spans from -55°C to +150°C, with power dissipation rated at 0.36 W.

Single FETs, MOSFETs Feature Summary

  • Logic-level operation suitable for direct interface with standard logic circuits
  • High breakdown voltage capability for robust switching applications
  • Enhancement mode design ensuring reliable off-state performance

Single FETs, MOSFETs Applications

  • Small-signal switching in industrial control systems
  • Consumer electronics load switching
  • General-purpose low-power signal modulation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code E6327 against the required tape and reel specifications. Confirm that the component meets the necessary automotive or industrial qualification standards if applicable to the target system. Ensure compatibility with the designated surface-mount assembly process parameters.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation in a compact footprint. Consider the thermal resistance limits when designing heat dissipation strategies. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to the BSS123 series of SIPMOS transistors designed for general-purpose small-signal applications. It utilizes silicon technology optimized for cost-effective mass production while maintaining reliability across wide temperature ranges common in consumer and industrial environments.

Single FETs, MOSFETs Replacement Considerations

Check datasheet compatibility for pinout and electrical characteristics before substituting with other N-channel MOSFETs in the SOT-23 package.

BSS123L6327HTSA1BSS123L6327HTSA1
$0.28
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