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BSS123L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
The Infineon BSS123L6327HTSA1 is a SIPMOS N-channel enhancement mode small-signal transistor in an SOT-23 package. It features a drain-source voltage of 100 V and a continuous drain current of 0.17 A at 25°C. The device has a maximum on-state resistance of 6 Ω at VGS=10V and 10 Ω at VGS=4.5V, with a gate threshold voltage range of 0.8 to 2.0 V. Operating temperature spans from -55°C to +150°C, with power dissipation rated at 0.36 W.
Verify the specific ordering code E6327 against the required tape and reel specifications. Confirm that the component meets the necessary automotive or industrial qualification standards if applicable to the target system. Ensure compatibility with the designated surface-mount assembly process parameters.
Select this component for applications requiring high voltage isolation in a compact footprint. Consider the thermal resistance limits when designing heat dissipation strategies. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds without excessive drive current demands.
This part belongs to the BSS123 series of SIPMOS transistors designed for general-purpose small-signal applications. It utilizes silicon technology optimized for cost-effective mass production while maintaining reliability across wide temperature ranges common in consumer and industrial environments.
Check datasheet compatibility for pinout and electrical characteristics before substituting with other N-channel MOSFETs in the SOT-23 package.
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