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BSS123L6433HTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123L6433HTMA1
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.67 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：69 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123L6433HTMA1
Single FETs, MOSFETs Overview
The BSS123L6433HTMA1 is an N-channel, enhancement-mode logic-level small-signal MOSFET from Infineon Technologies. It features a drain-source voltage rating of 100 V and a continuous drain current of 0.17 A at 28 °C. The device operates with a gate threshold voltage between 0.8 V and 2.0 V. Maximum on-state resistance is specified as 6 Ω at 10 V gate drive and 10 Ω at 4.5 V. It utilizes a SOT-23 surface-mount package and supports junction temperatures from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Logic-level operation enabling direct interface with standard digital logic circuits
- High breakdown voltage capability for robust signal switching applications
- Enhancement mode design ensuring reliable off-state performance
Single FETs, MOSFETs Applications
- Signal switching in industrial control systems
- Level shifting in consumer electronic devices
- General-purpose low-power switching tasks
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code E6433 against the required tape and reel configuration. Confirm that the component meets RoHS compliance standards and lead-free requirements before finalizing procurement. Ensure the selected variant matches the exact marking code 'SAs' for identification purposes.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel solution is required for low-current applications. Consider the maximum on-resistance limits under varying gate voltages to ensure adequate drive levels. Evaluate thermal constraints based on the specified power dissipation ratings at ambient temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the SIPMOS small-signal transistor family designed for efficient switching. It serves as a fundamental building block for discrete semiconductor solutions in modern electronics. The technology focuses on providing reliable performance within a minimal footprint suitable for dense circuit board layouts.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other BSS123 variants sharing the E6433 ordering suffix. Verify pinout compatibility and electrical parameter alignment before substitution.
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