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BSS123LT3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
The BSS123LT3G is an N-channel enhancement mode MOSFET from the PowerTrench series, packaged in a surface-mount SOT-23 (TO-236AB) housing. It features a drain-source voltage rating of 100 Vdc and a continuous drain current capacity of 0.17 Adc. The device exhibits a maximum static drain-source on-resistance of 6.0 Ohms at a gate-source voltage of 10 Vdc. Thermal characteristics include a total device dissipation of 225 mW and a junction-to-ambient thermal resistance of 556 °C/W. Operating temperatures range from -55°C to +150°C.
Verify that the ordering suffix matches the required packaging quantity and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the component meets specific automotive or industrial qualification requirements if applicable to the design.
Select this component for designs requiring a compact N-channel switch with moderate voltage handling. Evaluate the thermal resistance and power dissipation limits against the expected load current. Consider the gate threshold voltage range when interfacing with logic-level control signals.
This part belongs to the BSS123L family of small-signal MOSFETs manufactured by onsemi. It utilizes the SOT-23 package style, designated as CASE 318. The device is designed for general-purpose switching tasks within consumer electronics and industrial control boards.
Compatible substitutes include BSS123LT1G and BVSS123LT1G. Verify pinout compatibility and electrical parameter equivalence before implementation.
The typical turn-on delay time is 20 ns under standard test conditions.
Standard versions are not explicitly qualified for automotive use; the BVSS prefix indicates AEC-Q101 qualification and PPAP capability.
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