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BSS123LT7G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 15UA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123LT7G
- Description：MOSFET N-CH 100V 15UA SOT23
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSS123LT7G
Single FETs, MOSFETs Overview
The BSS123LT7G is an N-channel enhancement mode MOSFET from the PowerTrench series, packaged in a surface-mount SOT-23 (CASE 318) housing. It features a maximum drain-source voltage of 100 Vdc and a continuous drain current of 0.17 Adc. The device exhibits a static drain-source on-resistance of 6.0 ohms at VGS = 10 Vdc and ID = 100 mAdc. Total device dissipation is rated at 225 mW with a thermal resistance junction-to-ambient of 556 °C/W. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- HBM Class 0A and MM Class M1B electrostatic discharge protection capabilities
- Lead-free construction compliant with RoHS standards
- Enhanced gate oxide technology for robust switching performance
Single FETs, MOSFETs Applications
- Low-side switching applications
- Power management circuits
- General-purpose amplification
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix LT7G against official documentation to confirm tape and reel quantities and packaging specifications. Ensure that the component meets all relevant environmental compliance requirements for the intended deployment environment before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with high voltage tolerance is required for low-current switching tasks. Evaluate the thermal resistance and power dissipation limits relative to the expected operating conditions to ensure reliable performance within the specified temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the PowerTrench family of MOSFETs designed for efficient power switching. The SOT-23 package provides a small footprint suitable for space-constrained designs. The device utilizes advanced trench technology to optimize on-resistance and switching characteristics.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent components from other manufacturers.
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