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BSS123NH6433XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190MA SOT23-3. Review the specifications below when checking this part for your BOM.
The BSS123NH6433XTMA1 is an N-channel enhancement mode MOSFET from the OptiMOS series, housed in a surface-mount PG-SOT23 package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 0.19 A at 25 °C. The device has a typical gate charge of 0.6 nC and a maximum on-state resistance of 6 Ω at VGS=10 V. It operates within a temperature range of -55 °C to 150 °C and is qualified according to AEC-Q101 standards.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required tape and reel packaging specifications. Ensure compliance with RoHS and halogen-free material declarations as stated in the datasheet before finalizing procurement orders.
Select this component when a 100 V N-channel MOSFET with low gate charge is required for logic-level control. Consider its avalanche rating for circuits prone to inductive load switching. Evaluate thermal performance based on the specified junction-to-ambient resistance for the target PCB footprint.
This part belongs to the BSS123N family of OptiMOS small-signal transistors. It shares core electrical characteristics with other variants in the series but differs in packaging and manufacturing lot specifications defined by the H6433 suffix. It serves as a specialized replacement for general-purpose small-signal MOSFETs in space-constrained designs.
Direct substitutes include BSS123NH6327XTSA1 and BSS123N H6327, which share identical electrical ratings and package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.