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BSS123TC is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123TC
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123TC
Single FETs, MOSFETs Overview
The BSS123TC is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes advanced trench technology to minimize on-state resistance while providing rugged and fast switching performance. The device features a high drain-source voltage rating of 100V and a continuous drain current of 0.17A at +25°C. Key electrical parameters include a maximum static drain-source on-resistance of 6.0Ω at VGS=10V, a gate threshold voltage range of 0.8V to 2.0V, and a power dissipation capability of 300mW. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for minimized on-state resistance
- Fast switching speed with low input capacitance
- High reliability qualification to JEDEC standards
- Lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- Small servo motor controls
- Power MOSFET gate drivers
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging type and quantity. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications. Ensure the selected variant aligns with the intended application's thermal and electrical requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, low-current applications requiring fast switching and high reliability. Evaluate the on-resistance characteristics at the specific operating gate voltage to ensure efficiency. Consider the thermal resistance and power dissipation limits when designing the heat management strategy for the target circuit environment.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed for general-purpose switching and amplification in compact surface-mount packages. The family offers a balance of performance and cost-effectiveness for consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
An automotive-compliant version is available under the separate datasheet designation BSS123Q. Verify pinout compatibility and electrical parameter overlaps if substituting with similar N-channel MOSFETs from other manufacturers.
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