BSS123W RFG

$0.19

Description：100V, 0.16A, SINGLE N-CHANNEL PO
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:30487427b542 Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

BSS123W RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 100V, 0.16A, SINGLE N-CHANNEL PO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123W RFG

Description：100V, 0.16A, SINGLE N-CHANNEL PO
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：298mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for BSS123W RFG

BSS123W RFG

Single FETs, MOSFETs Overview

The BSS123W RFG is an N-channel enhancement mode MOSFET from Taiwan Semiconductor, housed in a SOT-323 surface-mount package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 160 mA at 25°C. The device exhibits a low on-state resistance of 5 Ω at VGS = 10V and 5.5 Ω at VGS = 4.5V. Total gate charge is specified at 1.1 nC under standard test conditions. Maximum power dissipation reaches 298 mW at 25°C, with an operating junction temperature range spanning -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Logic level compatible for direct interface with digital control signals
Low gate charge optimized for fast switching applications
Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

Low side load switching
Level shift circuits
General switch circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSS123W RFG against official Taiwan Semiconductor documentation to confirm the SOT-323 packaging and 3,000-piece reel quantity. Ensure that the component meets RoHS compliance requirements and matches the intended thermal and electrical specifications for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with logic-level drive capability is required. The SOT-323 package suits space-constrained designs. Evaluate the 5 Ω on-resistance and 160 mA current limit against circuit demands. Confirm suitability for general switching or level shifting tasks within the specified thermal limits.

Single FETs, MOSFETs Part Context

This part belongs to the BSS123W series of N-channel Power MOSFETs manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and is designed for surface mount assembly. The device is characterized by its low conductive losses and fast switching performance, making it suitable for various consumer and industrial electronic applications.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other manufacturers offering BSS123W equivalents in SOT-323 packages. Verify matching parameters such as VDS, ID, RDS(on), and package dimensions before substitution.