BSS123W

Single FETs, MOSFETs Overview

The BSS123W is an N-channel logic level enhancement mode field effect transistor manufactured by onsemi. It utilizes high cell density trench MOSFET technology to minimize on-state resistance while providing rugged and reliable performance. The device features a drain-source voltage of 100 V, continuous drain current of 0.17 A, and gate-source voltage of ±20 V. Static drain-source on-resistance is specified at 6 Ω at VGS = 10 V and 10 Ω at VGS = 4.5 V. Total power dissipation is 200 mW with a junction-to-ambient thermal resistance of 625 °C/W. Operating temperature range spans from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• High density cell design for low RDS(ON)
• Ultra small surface mount package
• Very low capacitance
• Fast switching speed

Single FETs, MOSFETs Applications

• Small servo motor control
• Power MOSFET gate drivers
• Logic level transistor
• High speed line drivers
• Power management/power supply and switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source when sourcing this component, as it was originally produced by Fairchild Semiconductor prior to integration into ON Semiconductor. Confirm that the ordering suffix 'W' corresponds to the SOT-323 3L tape and reel packing method. Ensure compliance with RoHS standards and lead-free requirements during procurement. Check for any updated part nomenclature changes resulting from system integration processes.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, low-current applications requiring fast switching and minimal capacitance. Consider the 100 V drain-source voltage rating and 0.17 A continuous current limit for circuit design. Evaluate the SOT-323 package size for space-constrained designs. Verify thermal management capabilities given the 200 mW power dissipation limit and 625 °C/W thermal resistance under standard operating conditions.

Single FETs, MOSFETs Part Context

The BSS123W belongs to the PowerTrench series of N-channel enhancement mode field effect transistors. Originally developed by Fairchild Semiconductor, it is now part of the ON Semiconductor portfolio following corporate integration. The device is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical. It represents a standard commercial product not intended for automotive or life support systems without specific approval.

Single FETs, MOSFETs Replacement Considerations

BSS123