BSS126H6327XTSA1

Single FETs, MOSFETs Overview

The BSS126H6327XTSA1 is an N-channel depletion mode SIPMOS small-signal transistor in a PG-SOT-23 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 21 mA at 25 °C. The device has a maximum on-state resistance of 700 Ω at VGS=0 V and a gate threshold voltage typically around -2.0 V. It supports a power dissipation of 0.5 W, operates between -55 °C and +150 °C, and includes a reverse diode rated for 6 kV/µs dv/dt.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation with normally-on state at zero gate-source voltage
• High dv/dt rating for the integrated reverse diode
• Gate threshold voltage sorting into specific bands indicated on the reel label

Single FETs, MOSFETs Applications

• Constant current source circuits
• High-frequency switching applications
• Compact design implementations requiring high breakdown voltage

Single FETs, MOSFETs Procurement Notes

Verify the specific gate threshold voltage band required for the application, as reels contain transistors sorted into single bands identified by letters on the label. Confirm that the depletion mode characteristic aligns with the circuit design requirements, as the device conducts when VGS is zero. Ensure the PG-SOT-23 footprint matches the PCB layout specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a normally-on N-channel MOSFET with high voltage capability. The available threshold voltage bands allow for tighter control over turn-off characteristics compared to unsorted devices. Consider the thermal resistance and power dissipation limits when determining heat sinking needs for the SOT-23 package.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, which offers depletion mode options in compact packages. The series provides breakdown voltages ranging from 60 V to 600 V, designed for applications demanding low negative turn-off voltages and robust safe operating areas.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for other N-channel depletion MOSFETs in SOT-23 packages with similar 600 V ratings. Verify that substitute parts match the required threshold voltage banding if precise turn-off levels are critical.