BSS126H6327XTSA2

Single FETs, MOSFETs Overview

The Infineon BSS126H6327XTSA2 is an N-channel depletion mode SIPMOS small-signal transistor housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 21 mA at 25 °C. The device exhibits a maximum on-state resistance of 700 Ω at VGS=0 V and operates within a temperature range of -55 °C to +150 °C. It includes dv/dt rating capabilities, AEC-Q101 qualification, and halogen-free construction.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation with inherent conductivity at zero gate-source voltage
• High dv/dt rating for robust reverse diode performance
• AEC-Q101 qualified for automotive reliability standards
• Halogen-free composition compliant with IEC61249-2-21

Single FETs, MOSFETs Applications

• Automotive electronic circuits requiring high-voltage small-signal switching
• Constant current source implementations leveraging depletion mode characteristics
• High-frequency switching applications utilizing fast dynamic response
• Compact design solutions benefiting from the SOT-23 footprint

Single FETs, MOSFETs Procurement Notes

Verify the specific VGS(th) band letter printed on the reel label matches project requirements, as the H6327 suffix indicates standard unsorted reels. Confirm RoHS compliance and Pb-free lead plating status through official manufacturer documentation. Ensure the ordering suffix aligns with the desired packaging format and tape-and-reel specifications provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel behavior is required for high-voltage signal paths. The 600 V breakdown voltage supports demanding industrial or automotive environments. Consider the thermal resistance and power dissipation limits relative to ambient operating conditions. The depletion mode characteristic simplifies biasing networks compared to enhancement-mode alternatives.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for compact and efficient circuit designs. The BSS126 series specifically targets applications needing high voltage handling in small packages. It complements other N-channel MOSFETs by offering depletion mode functionality, distinct from standard enhancement-mode devices found in general-purpose switching roles.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the N-channel depletion mode configuration and 600 V rating. Verify pinout compatibility with the PG-SOT-23 package. Check if alternative parts offer similar dv/dt ratings and AEC-Q101 qualification for automotive use. Cross-reference thermal characteristics and on-state resistance values to ensure circuit performance parity.