BSS126SK-13

Single FETs, MOSFETs Overview

The BSS126SK-13 is an N-channel depletion mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 600V and operates within a junction temperature range of -55°C to +150°C. The device is housed in a SOT23 package with matte tin annealed terminals over a copper leadframe. Key electrical characteristics include a maximum gate-source voltage of ±20V, a continuous drain current of 30mA at 25°C, and a static drain-source on-resistance of up to 700Ω at VGS = 0V. The component is designed for high-voltage applications requiring fast switching capabilities.

Single FETs, MOSFETs Feature Summary

• N-channel depletion mode operation
• ESD protected structure
• Totally lead-free and fully RoHS compliant
• Halogen and antimony free green device

Single FETs, MOSFETs Applications

• Motor control
• Backlighting
• DC-DC converters
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration when placing orders. Confirm that the procurement channel is authorized by Diodes Incorporated to ensure product authenticity and adherence to standard terms and conditions. Check for any recent product change notifications or end-of-life status updates directly from the manufacturer before finalizing supply agreements.

Single FETs, MOSFETs Selection Notes

Select this component for small-signal and level shift applications requiring high voltage handling and fast switching speeds. Ensure the design accommodates the specific depletion mode behavior where the device conducts at zero gate-source voltage. Evaluate thermal performance against the specified power dissipation limits and thermal resistance values under expected operating conditions and PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the BSS126SK series of N-channel depletion mode MOSFETs from Diodes Incorporated. It utilizes advanced planar technology to deliver high voltage performance. The datasheet indicates this component is not recommended for new designs; engineers should consult the manufacturer for alternative solutions suitable for modern design implementations.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states this component is not recommended for new designs. Contact Diodes Incorporated or local representatives for qualified replacement parts or updated alternatives suitable for new design implementations.