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BSS127 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS127 E6327
- Description：MOSFET N-CH 600V 21MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS127 E6327
Single FETs, MOSFETs Overview
The BSS127 E6327 is an N-channel enhancement mode small signal MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 600 V and a continuous drain current of 21 mA at 25°C. Key electrical characteristics include a maximum on-resistance of 310 Ohms, a gate threshold voltage of 2 V, and a gate charge of 650 pC. It operates within a temperature range of -55°C to +150°C with a power dissipation of 500 mW.
Single FETs, MOSFETs Feature Summary
- High voltage capability with 600 V drain-source breakdown for robust switching applications
- Compact SOT-23-3 surface-mount packaging suitable for space-constrained designs
- Automotive qualification ensuring reliability under demanding environmental conditions
Single FETs, MOSFETs Applications
- Industrial control systems requiring high-voltage small-signal switching
- Consumer electronics utilizing compact form-factor transistors
- Automotive electronic circuits meeting AEC-Q100 standards
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact tape-and-reel quantities and packaging variations. Ensure the component meets required automotive or industrial qualification grades before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage isolation in a minimal footprint. Consider the low continuous current rating when designing load circuits. Verify thermal management requirements given the 500 mW power dissipation limit in the specified package.
Single FETs, MOSFETs Part Context
This part belongs to the BSS127 series of N-channel small signal MOSFETs from Infineon. The series is designed for general-purpose switching applications where high voltage tolerance and small size are critical. It represents a standard solution for low-power control tasks in modern electronic devices.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 600 V rating, SOT-23-3 package, and N-channel enhancement mode configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
