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BSS127H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS127H6327XTSA1
- Description：MOSFET N-CH 600V 21MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS127H6327XTSA1
Single FETs, MOSFETs Overview
The BSS127H6327XTSA1 is an n-channel enhancement mode small-signal MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a 600 V drain-source breakdown voltage and a continuous drain current of 21 mA at 25 °C. The device operates within a temperature range of -55 °C to +150 °C and has a maximum power dissipation of 0.5 W. It is qualified according to AEC-Q101 standards and housed in a PG-SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Logic level rated for 4.5V operation
- Rated dv/dt capability
- Qualified according to AEC Q101
Single FETs, MOSFETs Applications
- High-voltage switching applications
- Small-signal amplification circuits
- Automotive electronic systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix XTSA1 against official Infineon documentation to confirm tape and reel packaging details. Ensure the component meets AEC-Q101 automotive qualification requirements if intended for automotive use. Cross-reference datasheet revision 1.47 for accurate electrical characteristics and thermal resistance values before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage, low-current switching tasks requiring robust dv/dt performance. The logic-level rating facilitates direct interface with standard control logic. Consider the 500 Ω maximum on-resistance when designing for minimal conduction losses in microampere to low milliampere current regimes.
Single FETs, MOSFETs Part Context
This part belongs to the BSS127 series of SIPMOS small-signal transistors. It represents a silicon-based N-channel enhancement mode device designed for compact surface-mount applications. The series offers high breakdown voltages suitable for demanding environments while maintaining a small physical footprint.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume functional equivalence based solely on pinout compatibility without verifying electrical parameters such as breakdown voltage and on-resistance.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
