BSS127IXTSA1

Single FETs, MOSFETs Overview

The BSS127IXTSA1 is a single N-channel enhancement mode small signal MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a drain-source breakdown voltage of 600 V and a continuous drain current of 21 mA at 25°C. Its maximum gate-source voltage rating is ±20 V, with a typical gate charge of 650 pC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 500 mW.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 600 V drain-source breakdown voltage for robust operation in demanding circuits.
• Compact surface-mount design in an SOT-23-3 package suitable for space-constrained applications.
• Enhanced mode operation optimized for low-power switching tasks.

Single FETs, MOSFETs Applications

• Industrial control systems requiring high-voltage isolation.
• Consumer electronics utilizing small signal switching.
• General-purpose logic level interface circuits.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XTSA1 to confirm the reel packaging configuration and tape specifications required for automated assembly processes. Ensure that the RoHS compliance status aligns with current environmental regulations for the target market. Cross-reference the manufacturer part number against official Infineon documentation to validate authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET is required in a minimal footprint. The 600 V rating distinguishes it from standard low-voltage logic-level transistors. Consider the 21 mA current limit and 500 Ohm on-resistance characteristics to ensure compatibility with the intended load requirements and drive circuitry capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the BSS127 series of small signal MOSFETs designed for industrial and consumer markets. It represents a silicon-based solution offering high voltage tolerance in a compact form factor. The series is engineered to provide reliable performance for switching applications where board space is limited but high voltage isolation is necessary.

Single FETs, MOSFETs Replacement Considerations

The part number alias BSS127I indicates a functional equivalent within the same product family. Verify pinout compatibility and electrical parameter tolerances before substituting with other manufacturers' offerings.