BSS127L6327HTSA1

$0.07

Description：MOSFET N-CH 600V 21MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:7a12b01ace1d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSS127L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS127L6327HTSA1

Description：MOSFET N-CH 600V 21MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs：1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS127L6327HTSA1

BSS127L6327HTSA1

Single FETs, MOSFETs Overview

The BSS127L6327HTSA1 is an n-channel enhancement mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates with a drain-source voltage of 600 V and a continuous drain current of 21 mA at 25 °C. The device features a maximum on-state resistance of 500 Ohms at Vgs=10V and a gate threshold voltage ranging from 1.4 to 2.6 V. Packaged in PG-SOT-23, it supports a power dissipation of 0.5 W and functions within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Logic level operation rated for 4.5 V gate drive
Rated dv/dt capability for high-speed switching applications
Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

High-voltage signal switching circuits
Automotive electronic control modules
Logic level translation interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and marking codes. Ensure component authenticity through authorized distribution channels and validate RoHS compliance status prior to integration into production assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage in a compact surface-mount package. Evaluate thermal constraints carefully due to low continuous current ratings. Confirm that the logic-level threshold characteristics align with the available control voltage levels in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the BSS127 series of SIPMOS transistors designed for general-purpose switching. It utilizes silicon technology and is housed in a standard SMD footprint suitable for automated assembly processes. The series emphasizes reliability and compliance with strict environmental directives.