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BSS138-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 50V 200MA SOT23-3. Review the specifications below when checking this part for your BOM.
The BSS138-7 is an N-channel enhancement mode vertical DMOS field-effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vds) of 50 V and a continuous drain current (Id) of 200 mA at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 3.5 Ohms at Vgs = 10 V and 6 Ohms at Vgs = 4.5 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 300 mW.
Verify the specific suffix against official Diodes Incorporated documentation, as standard commercial variants typically carry a "-7-F" designation. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements directly from the manufacturer's datasheet before procurement.
Select this component for low-voltage switching tasks requiring logic-level gate drive compatibility. Ensure the application current remains below the 200 mA continuous limit and that thermal management accommodates the 300 mW power dissipation constraint in the chosen package configuration.
This part belongs to the BSS138 series of N-channel MOSFETs designed for general-purpose switching. It serves as a compact solution for signal level shifting and low-power load control in consumer electronics and industrial control boards where space efficiency is critical.
Public confirmed substitutes include BSS138DW-7-F and BSS138Q-7-F.
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