Single FETs, MOSFETs BSS138-7 product image

BSS138-7

$0.46
  • Description:MOSFET N-CH 50V 200MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:47edade6aa92 Category: Brand:

  
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BSS138-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 50V 200MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS138-7

  • Description:MOSFET N-CH 50V 200MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS138-7

BSS138-7

Single FETs, MOSFETs Overview

The BSS138-7 is an N-channel enhancement mode vertical DMOS field-effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vds) of 50 V and a continuous drain current (Id) of 200 mA at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 3.5 Ohms at Vgs = 10 V and 6 Ohms at Vgs = 4.5 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 300 mW.

Single FETs, MOSFETs Feature Summary

  • Logic-level compatible for direct interface with TTL and CMOS circuits
  • High power and current handling capability in surface mount packages
  • ESD protection rating of 1000 V HBM

Single FETs, MOSFETs Applications

  • Direct logic-level interface applications
  • Drivers for relays, solenoids, lamps, and hammers
  • Battery-operated systems
  • Solid-state relay implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation, as standard commercial variants typically carry a "-7-F" designation. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements directly from the manufacturer's datasheet before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching tasks requiring logic-level gate drive compatibility. Ensure the application current remains below the 200 mA continuous limit and that thermal management accommodates the 300 mW power dissipation constraint in the chosen package configuration.

Single FETs, MOSFETs Part Context

This part belongs to the BSS138 series of N-channel MOSFETs designed for general-purpose switching. It serves as a compact solution for signal level shifting and low-power load control in consumer electronics and industrial control boards where space efficiency is critical.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitutes include BSS138DW-7-F and BSS138Q-7-F.

BSS138-7BSS138-7
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