BSS138

Single FETs, MOSFETs Overview

The BSS138 is an N-channel enhancement-mode MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum drain-source voltage (V_DSS) of 50 V and a continuous drain current (I_D) of 220 mA at 25°C. The device has a maximum gate-source voltage (V_GS) of ±20 V and a total power dissipation (P_D) of 225 mW at 25°C, derating by 1.8 mW/°C above this temperature. The junction temperature range is -55°C to +150°C. Electrical characteristics include a gate threshold voltage (V_GS(th)) of up to 1.6 V at I_D = 1 mA, a static drain-source on-state resistance (R_DS(on)) of 3.5 Ω at V_GS = 10 V and I_D = 220 mA, and an input capacitance (C_iss) of 50 pF at V_DS = 25 V.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement-mode MOSFET with logic-level gate drive capability
• Surface-mount SOT-23 package for compact circuit integration
• High thermal stability with a maximum junction temperature of 150°C

Single FETs, MOSFETs Applications

• Level shifting in digital communication circuits
• Low-side switching for small signal loads
• General-purpose amplification stages

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. when sourcing components. Confirm that the part number matches the specific electrical ratings provided in the datasheet, particularly the 220 mA continuous drain current limit. Ensure the package type corresponds to the SOT-23 outline dimensions listed in the documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low-voltage switching with minimal footprint. The 50 V breakdown voltage and 220 mA current rating define its operational limits. Consider the 3.5 Ω on-resistance at 10 V gate drive when calculating conduction losses. The SOT-23 package suitability depends on available board space and thermal management requirements within the target design.

Single FETs, MOSFETs Part Context

This component belongs to the discrete semiconductor category, specifically functioning as a single N-channel MOSFET. It is designed for surface-mount technology (SMT) assembly using the standard SOT-23 form factor. The device utilizes silicon-based MOS technology to provide efficient electronic switching and amplification capabilities for low-power analog and digital systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other manufacturers' BSS138 equivalents if supply constraints exist. Verify that substitute parts maintain identical pinout configurations and meet or exceed the 50 V V_DSS and 220 mA I_D specifications. Ensure thermal resistance and package dimensions are compatible with existing PCB layouts.

Single FETs, MOSFETs FAQ

What is the maximum allowable gate-source voltage?

The maximum gate-source voltage (V_GS) is rated at ±20 V.

How does the power dissipation change with temperature?

The total device dissipation is 225 mW at 25°C ambient temperature and must be derated by 1.8 mW per degree Celsius above 25°C.