BSS138_L99Z

$0.05

Description：MOSFET N-CH 50V 220MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:29a8ef59642c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BSS138_L99Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 50V 220MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS138_L99Z

Description：MOSFET N-CH 50V 220MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：27 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS138_L99Z

BSS138_L99Z

Single FETs, MOSFETs Overview

The onsemi BSS138 is an N-channel enhancement mode field effect transistor manufactured using proprietary DMOS technology. It features a maximum drain-source voltage of 50 V and a continuous drain current of 0.22 A. The device offers low on-state resistance, specified as 3.5 Ω at VGS = 10 V and 6.0 Ω at VGS = 4.5 V. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 0.36 W. The component is housed in a compact SOT-23 surface mount package.

Single FETs, MOSFETs Feature Summary

High density cell design for extremely low on-state resistance
Rugged and reliable performance suitable for switching applications
Compact industry standard SOT-23 surface mount package
ESD protection rated at HBM Class 0A and MM Class M

Single FETs, MOSFETs Applications

Small servo motor control
Power MOSFET gate drivers
Low voltage, low current switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Confirm that the selected variant meets all required electrical parameters and thermal characteristics for the intended application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low voltage operation and fast switching capabilities. Ensure the gate drive voltage aligns with the threshold requirements to achieve optimal on-state resistance. Consider the thermal resistance characteristics when designing the PCB layout to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This N-channel logic level enhancement mode FET belongs to the BSS138 series produced by onsemi. It utilizes high cell density DMOS technology to minimize on-state resistance while providing rugged switching performance. The device is designed specifically for low voltage and low current applications where compact size and reliability are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets to verify pinout compatibility and electrical parameter equivalence when considering alternative components. Ensure any substitute part matches the required voltage ratings, current handling capabilities, and package dimensions for direct replacement.