BSS138AKQB-QZ

Single FETs, MOSFETs Overview

The BSS138AKQB-Q is a 60 V N-channel Trench MOSFET in a DFN1110D-3 (SOT8015) leadless package. It features logic-level compatibility and an extended junction temperature range up to 175 °C. Key electrical parameters include a drain-source voltage of 60 V, gate-source voltage of ±20 V, continuous drain current of 340 mA at 25 °C, and peak drain current of 4 A. The on-state resistance is typically 2.1 Ω at VGS=10 V. It includes ESD protection rated at 500 V HBM and is qualified under AEC-Q101.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Extended thermal capability supporting junction temperatures up to 175 °C
• Side wettable flanks enable optical solder joint inspection
• Integrated electrostatic discharge protection

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switching
• General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'QZ' against official Nexperia documentation to confirm packaging details, as datasheets may reference standard reel quantities or tape-and-reel formats without explicitly detailing the 'QZ' variant's packing configuration. Ensure the component matches the DFN1110D-3 outline dimensions and marking code 'QL'. Confirm automotive qualification status aligns with project requirements.

Single FETs, MOSFETs Selection Notes

Select this device for designs requiring low on-resistance at logic gate drive voltages and high-temperature operation. The DFN1110D-3 package offers a compact footprint suitable for space-constrained layouts. Verify that the 340 mA continuous current rating meets the load requirements at the intended operating ambient temperature, considering the derating curves provided in the thermal characteristics section.

Single FETs, MOSFETs Part Context

This component belongs to Nexperia's BSS138AK series of N-channel enhancement mode Field-Effect Transistors. The series utilizes Trench MOSFET technology to achieve fast switching speeds and low threshold voltages. The BSS138AKQB-Q specifically denotes the version packaged in the extremely thin DFN1110D-3 form factor, distinguishing it from SOT23 or other package variants within the same electrical family.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 60 V rating, N-channel polarity, and DFN1110D-3 (SOT8015) package outline. Verify pinout compatibility (Gate, Source, Drain) and ensure equivalent RDS(on) and thermal resistance values are met by alternative manufacturers.