BSS138BKT116

$0.35

Description：NCH 60V 400MA SMALL SIGNAL MOSFE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:56fb1ff1e567 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：NCH 60V 400MA SMALL SIGNAL MOSFE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：680mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id：2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138BKT116

Overview

The BSS138BKT116 is a single N-channel small signal MOSFET manufactured by ROHM Semiconductor. It features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 400 mA at 25°C. The device exhibits a typical Rds(on) of 0.68 Ohms at Vgs=10V and Id=400mA, with a threshold voltage (Vgs(th)) of 2V at 10µA. Maximum Gate-Source Voltage (Vgs) is ±20V, and input capacitance (Ciss) is 47 pF at 30V. Power dissipation is rated at 200 mW, operating within a temperature range of -55°C to +150°C TJ. It utilizes an SOT-23 (TO-236AB) surface-mount package.

Feature Summary

Integrated ESD protection diode for enhanced circuit robustness
Capable of fast switching speeds suitable for high-frequency applications
Supports ultra-low voltage drive operation at 2.5V

Applications

Switching circuits
Low-side load switches
Relay drivers

Procurement Notes

Verify the specific suffix 'T116' against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the standard grade classification aligns with your application's reliability standards, as this variant is not recommended for automotive equipment.

Selection Notes

Select this component when a compact N-channel MOSFET with 60V capability and integrated ESD protection is required. It is suitable for low-power switching tasks where space is limited. Consider the 200mW power dissipation limit and thermal management needs. Verify that the 400mA current rating satisfies the load requirements without exceeding safe operating area limits.

Part Context

This part belongs to the BSS138 series of small signal MOSFETs from ROHM Semiconductor. The series is known for its compact SOT-23 footprint and integration of ESD protection. Variants like BSS138BKWT106 offer similar electrical characteristics in different packages such as SOT-323. The BSS138BKT116 specifically denotes the standard grade version in a tape-and-reel format.