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Product Detailed Parameters
- Description：MOSFET N-CH 60V 360MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Nexperia BSS138BKVL is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a TO-236AB (SOT23) surface-mounted package. The device supports a drain-source voltage of 60 V and a continuous drain current of 360 mA at 25 °C. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-state resistance of 1.6 Ω at VGS=10V, and a total gate charge of 0.6 nC. It functions reliably across an ambient temperature range of -55 °C to +150 °C.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Very fast switching performance enabled by Trench MOSFET technology
- ESD protection rated up to 1.5 kV according to Human Body Model standards
- Qualified under AEC-Q101 automotive stress test requirements
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific suffix 'VL' against official Nexperia documentation to confirm tape-and-reel packaging specifications and manufacturing site codes. Ensure the ordering part number matches the required RoHS compliance status and automotive qualification level before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel switch is required for low-voltage applications. The TO-236AB package suits space-constrained designs. Verify that the 360 mA current rating and 60 V breakdown voltage align with the circuit's peak operational demands and thermal dissipation capabilities.
Part Context
This device belongs to the BSS138BK series of N-channel Trench MOSFETs manufactured by Nexperia. It shares core electrical characteristics with other variants in the family but differs in physical packaging and specific ordering suffixes. The series is designed for general-purpose switching tasks requiring small form factors.
Replacement Considerations
Check for BSS138BK or BSS138BK,215 as potential functional equivalents if the 'VL' suffix denotes a specific packaging variant rather than a different die specification. Confirm pinout compatibility and thermal resistance values match the existing design constraints.
