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Product Detailed Parameters
- Description：MOSFET N-CH 60V 320MA SOT323
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 320mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta), 830mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Nexperia BSS138BKW,115 is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in the SOT323 (SC-70) surface-mount package. The device supports a drain-source voltage of 60 V and a continuous drain current of 320 mA at 25°C. Key electrical parameters include a maximum on-state resistance of 1.6 Ω at VGS=10V and ID=320mA, with a gate-source threshold voltage ranging from 0.48 V to 1.6 V. Total gate charge is typically 0.7 nC. The component operates within a junction temperature range of -55°C to +150°C and features ESD protection up to 1.5 kV HBM.
Feature Summary
- Logic-level compatible for direct interface with standard logic families
- Very fast switching performance enabled by Trench MOSFET technology
- AEC-Q101 qualified for automotive reliability standards
- Integrated electrostatic discharge protection up to 1.5 kV HBM
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when space-constrained designs require a small SOT323 footprint. It is suitable for low-voltage applications needing fast switching speeds and logic-level compatibility. Ensure thermal management accounts for the 260 mW power dissipation limit in free air conditions.
Part Context
This part belongs to the Nexperia BSS138 series of N-channel Trench MOSFETs. While other variants like BSS138BK use the SOT23 package and BSS138BKS uses the dual-channel SOT363 package, the BSS138BKW specifically utilizes the compact SOT323 (SC-70) housing for single-channel applications.
Replacement Considerations
Direct pin-compatible substitutes include BSS138BK (SOT23 package) and BSS138PS (SOT363 package). Verify that the alternative package fits the PCB footprint and that electrical ratings meet the design requirements.
