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Product Detailed Parameters
- Description：NCH 60V 380MA, SOT-323, SMALL SI
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：680mOhm @ 380mA, 10V
- Vgs(th) (Max) @ Id：2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：200mW
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS138BWAHZGT106 is a single N-channel small-signal MOSFET designed for automotive applications, complying with the AEC-Q101 standard. It features a 60V drain-source voltage and a continuous drain current of 380mA in a UMT3 (SOT-323) surface-mount package. The device supports low-voltage driving at 2.5V with a typical on-resistance of 1Ω, reducing to 0.49Ω at 10V drive. It includes built-in ESD protection diodes rated up to 2kV HBM and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Built-in ESD protection diodes providing enhanced robustness against electrostatic discharge events.
- Capable of fast switching speeds suitable for high-frequency signal processing.
- Optimized for ultra-low voltage operation, enabling efficient control at 2.5V gate drive levels.
Applications
- Switching circuits requiring compact form factors
- High-side load switch implementations
- Relay driver interfaces
Procurement Notes
Verify the specific suffix 'T106' to confirm the tape-and-reel packaging format containing 3000 units per reel. Ensure the component meets the required AEC-Q101 automotive qualification standards for your target application environment. Confirm RoHS compliance and lead-free status during final procurement validation.
Selection Notes
Select this component when space-constrained designs require an N-channel MOSFET with integrated ESD protection. It is suitable for applications needing reliable performance under automotive-grade thermal conditions. Consider the 380mA current limit and 60V breakdown voltage when sizing for load requirements.
Part Context
This part belongs to Rohm Semiconductor's BSS138 series of automotive-grade small-signal MOSFETs. The series offers various package options including SOT-23 and SOT-323 variants. The BSS138BWAHZGT106 specifically utilizes the UMT3 footprint, providing a compact solution for modern electronic systems requiring high reliability.
Replacement Considerations
Consult official documentation for direct pin-compatible substitutes within the same family. Verify that any alternative component matches the AEC-Q101 automotive grade requirement and maintains equivalent electrical characteristics for seamless integration.
