BSS138DWK-13

BSS138DWK-13

$0.03
  • Description:MOSFET 2N-CH 50V 0.31A SOT363
  • Series:-

SKU:36535164044f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.31A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
  • Rds On (Max) @ Id, Vgs:2.6Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:22pF @ 25V
  • Power - Max:330mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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BSS138DWK-13

Overview

The BSS138DWK-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT363 package with two independent channels. Key electrical parameters include a drain-source voltage (BVDSS) of 50V and a gate-source voltage (VGSS) rating of ±20V. The maximum continuous drain current (ID) is 310mA at +25°C, decreasing to 250mA at +70°C. Static on-resistance (RDS(ON)) is specified as 2.6Ω max at VGS=10V, 3.2Ω max at VGS=4.5V, and 5.2Ω max at VGS=2.5V. Total power dissipation is 0.33W on FR-4 PCB with minimum pads, or 0.49W on a 1-inch square copper plate. Operating temperature range spans from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration in a compact SOT363 surface-mount package
  • Optimized for low on-state resistance while maintaining fast switching performance
  • Integrated ESD protection on the gate terminals
  • Fully RoHS compliant and halogen-free green device

Applications

  • Load switch applications
  • High efficiency power management circuits
  • General purpose switching

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging format as defined in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 standards if automotive qualification is required, noting that standard versions may differ from qualified variants. Ensure compatibility with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal footprint. Evaluate the RDS(ON) specifications against the intended gate drive voltage, as resistance varies significantly between 2.5V, 4.5V, and 10V logic levels. Consider the thermal resistance values for the specific PCB copper area available, as power dissipation capabilities depend heavily on the mounting substrate.

Part Context

This part belongs to the BSS138 family of MOSFETs produced by Diodes Incorporated. While sharing similar voltage ratings and channel types with other family members like the single-channel BSS138, the DWK variant specifically integrates two channels in the SOT363 package. This distinguishes it from single-channel alternatives and provides a solution for space-constrained dual-switching designs.

Replacement Considerations

Direct replacements must match the dual N-channel architecture and SOT363 footprint. Verify that alternative parts meet the 50V BVDSS requirement and provide comparable RDS(ON) characteristics at the target gate drive voltage. Check pinout compatibility, particularly the arrangement of drains, sources, and gates, to ensure interchangeability without circuit redesign.

BSS138DWK-13BSS138DWK-13
$0.03
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