ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.2A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
- Power - Max：200mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The BSS138DWQ-13 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 200mA at +25°C. The device exhibits a maximum static drain-source on-resistance of 3.5Ω at VGS = 10V. Total power dissipation is rated at 200mW, with an operating temperature range from -55°C to +150°C. It utilizes a SOT363 package and contains two independent channels.
Feature Summary
- Dual N-channel configuration in a compact SOT363 surface mount package
- AEC-Q101 qualified for automotive applications requiring specific change control
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
- Designed for low on-state resistance while maintaining superior switching performance
Applications
- Load switches
- High-efficiency power-management applications
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier quantity specified in the official datasheet. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure design parameters align with the 200mA continuous drain current limit and 200mW total power dissipation ratings under standard thermal conditions.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required within a minimal footprint. The SOT363 package accommodates two independent channels suitable for space-constrained designs. Verify that the 50V breakdown voltage and 200mA current rating satisfy the specific circuit load requirements before finalizing the selection.
Part Context
This part belongs to the BSS138 family of dual N-channel enhancement mode field effect transistors. The 'DWQ' designation indicates the specific SOT363 package variant and automotive-grade qualification status. The suffix '-13' specifically denotes the packaging format containing 10,000 units per tape and reel carrier.
Replacement Considerations
Direct substitutes include other BSS138DWQ variants such as BSS138DWQ-7, which shares identical electrical characteristics but differs in packaging quantity (3,000 units). Cross-manufacturer equivalents must be verified against the 50V rating, 3.5Ω RDS(on) maximum, and SOT363 pinout compatibility.
