BSS138DWQ-7

Overview

The BSS138DWQ-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 50 V and a continuous drain current (ID) of 200 mA at +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 1.4 Ω, with a maximum of 3.5 Ω at VGS = 10 V. Gate threshold voltage (VGS(TH)) ranges from 0.5 V to 1.5 V. Total power dissipation is rated at 200 mW, and the junction-to-ambient thermal resistance is 625 °C/W. Operating temperature spans -55°C to +150°C. The component utilizes an SOT363 package and is AEC-Q101 qualified.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact SOT363 surface-mount package.
• Optimized for high-efficiency power management through minimized on-state resistance while maintaining superior switching performance.
• Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capabilities.
• Manufactured in IATF 16949 certified facilities using halogen-free and antimony-free green molding compounds.

Applications

• Load switches
• High-efficiency power-management applications

Procurement Notes

Verify that the ordering suffix '-7' corresponds to the 3,000-unit tape and reel carrier format specified in the manufacturer's documentation. Confirm compliance with RoHS 3 directives and ensure the procurement channel is authorized to maintain warranty validity. Cross-reference the date code marking against the official key to validate production year and month accuracy.

Selection Notes

Select this component when space-constrained designs require two isolated N-channel switches in a single footprint. Ensure the application gate drive voltage supports the 1.4 Ω to 3.5 Ω RDS(ON) range effectively. Verify that the 200 mA continuous current rating and 200 mW power dissipation limits accommodate the thermal environment without exceeding the 625 °C/W junction-to-ambient resistance constraints.

Part Context

This part belongs to the BSS138 family of dual N-channel MOSFETs produced by Diodes Incorporated. It shares core electrical characteristics with other variants in the series but differs in packaging and qualification status. The SOT363 form factor distinguishes it from single-channel counterparts like the BSS138W, providing integrated dual-switching capability for complex circuit topologies.

Replacement Considerations

Direct substitutes must match the dual N-channel topology, SOT363 package, and 50V/200mA ratings. Verify equivalent RDS(ON) and VGS(TH) specifications to ensure circuit compatibility. Automotive-grade replacements should also possess AEC-Q101 qualification if the original design intent requires it.

FAQ

What is the maximum gate-source voltage rating?

The continuous gate-source voltage (VGSS) is rated at ±20 V.

Is the BSS138DWQ suitable for automotive use?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities for automotive applications requiring specific change control.

What is the typical turn-on delay time?

The typical turn-on delay time (tD(ON)) is 20 ns under test conditions of VDD = 30V, ID = 0.2A, and RGEN = 50Ω.