BSS138KDW

$0.14

Description：50V 200MA [email protected] 2 N-CHANNEL SOT
Series：*
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2026a45b4f3a Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：50V 200MA [email protected] 2 N-CHANNEL SOT
Series：*
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BSS138KDW

Overview

The BSS138KDW is a dual N-channel MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. in a SOT-363 surface-mount package. It features a drain-source breakdown voltage (VDS) of 50 V and a continuous drain current (ID) of 0.2 A at 25°C. The device has a maximum gate-source voltage (VGS) rating of ±20 V and a junction temperature limit of 150 °C. On-state resistance (RDS(on)) is specified as 5 Ω max at VGS=10V and 6 Ω max at VGS=4.5V, both measured at ID=0.2A. Total gate charge (Qg) is typically 1.7 nC at VGS=10V.

Feature Summary

Dual N-channel configuration with high-density cell design for low on-resistance
Voltage-controlled small signal switching capability
Integrated ESD protection mechanisms
High saturation current capability

Applications

Load switch applications for portable devices
DC/DC converter circuits

Procurement Notes

Verify the specific manufacturer part number against official datasheets to confirm electrical parameters and pinout assignments. Ensure the component matches the required SOT-363 package dimensions and thermal characteristics for your design. Cross-reference absolute maximum ratings with your system's operating conditions to prevent device failure.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage signal switching or load management. The SOT-363 package offers space efficiency compared to discrete single transistors. Consider the RDS(on) specifications at your intended drive voltage to ensure adequate current handling capabilities within the 0.2 A continuous limit.

Part Context

This component belongs to the BSS138 series of dual N-channel MOSFETs. It provides two independent N-channel FETs in a single SOT-363 package, designed for applications requiring multiple switching elements in a minimal footprint. The device utilizes standard silicon MOSFET technology optimized for small-signal operations.

Replacement Considerations

Check for compatible dual N-channel MOSFETs in the SOT-363 package with similar VDS and ID ratings. Verify that alternative parts meet the same RDS(on) requirements at your specific gate drive voltages. Ensure pinout compatibility between D1/S1/G1/D2/S2/G2 configurations to maintain circuit functionality without redesign.