BSS138LT1

Description：MOSFET N-CH 50V 200MA SOT-23
Series：-
Mfr：onsemi
Package：Cut Tape (CT)

SKU:d8e0a3c74fee Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 200MA SOT-23
Series：-
Mfr：onsemi
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138LT1

Overview

The BSS138LT1 is an N-channel enhancement mode MOSFET manufactured by onsemi, housed in a surface-mount SOT-23 package. It features a drain-to-source voltage rating of 50 V and a continuous drain current capacity of 200 mA at 25°C. The device exhibits a maximum static drain-to-source on-resistance of 3.5 Ω at a gate-to-source voltage of 5.0 V. Operating temperatures range from -55°C to +150°C, with a total power dissipation of 225 mW.

Feature Summary

Low threshold voltage suitable for low voltage applications
Miniature SOT-23 surface mount package design
High electrostatic discharge protection ratings

Applications

DC-DC converters
Power management in portable products
Battery-powered devices such as computers and printers
PCMCIA cards
Cellular and cordless telephones

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and tape-and-reel specifications. Confirm that the component meets required environmental standards, including RoHS compliance and lead-free status. Ensure the selected variant aligns with automotive qualification requirements if applicable, particularly regarding unique site control changes.

Selection Notes

Select this component for designs requiring small form factor solutions with low gate drive thresholds. Evaluate thermal resistance characteristics for ambient temperature conditions. Consider the maximum power dissipation limits when designing heat dissipation strategies. Verify compatibility with logic level signals due to the specified threshold voltage range.

Part Context

This part belongs to the BSS138L series of N-channel MOSFETs produced by onsemi. It utilizes silicon technology within a standard SOT-23 footprint. The series is designed for general-purpose switching and amplification tasks in consumer electronics and industrial equipment where space constraints are critical.