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Product Detailed Parameters
- Description：MOSFET N-CH 50V 200MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi BSS138LT3G is an N-channel enhancement mode MOSFET housed in a surface-mount SOT-23 package. It features a maximum drain-to-source voltage of 50 V and a continuous drain current of 200 mA at 25°C, with a pulsed current capability of 800 mA. The device has a maximum static drain-to-source on-resistance of 3.5 Ω at VGS = 5.0 V and 10 Ω at VGS = 2.75 V. Operating within a temperature range of -55°C to +150°C, it offers a low gate threshold voltage between 0.85 V and 1.5 V.
Feature Summary
- Low threshold voltage suitable for low voltage applications
- Miniature SOT-23 surface mount package design
- High electrostatic discharge protection ratings
Applications
- DC-DC converters
- Power management in portable products
- Battery-powered computers
- PCMCIA cards
- Cellular and cordless telephones
Procurement Notes
Verify the specific ordering suffix LT3G corresponds to the required tape and reel quantity of 10,000 units. Confirm that the BVSS prefix variant is not required if unique site control or automotive PPAP capabilities are necessary for the application. Ensure compliance with RoHS and halogen-free material standards during procurement.
Selection Notes
Select this component when board space is limited due to its miniature SOT-23 form factor. It is appropriate for designs requiring low gate drive voltages given the low threshold voltage specification. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or continuous operation near the maximum ratings.
Part Context
This part belongs to the BSS138L and BVSS138L series of N-channel MOSFETs manufactured by onsemi. The standard BSS138L variant differs from the BVSS prefix version, which is qualified under AEC-Q101 and capable of PPAP submission for automotive applications. Both share similar electrical characteristics but differ in manufacturing site controls.
Replacement Considerations
BSS138LT1G (Tape & Reel, 3,000 units)
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 200 mA at an ambient temperature of 25°C.
Is this device suitable for automotive applications?
The standard BSS138LT3G is not explicitly designated for automotive use; the BVSS138LT3G variant is AEC-Q101 qualified and PPAP capable for such requirements.
