BSS138LT7G

$0.25

Description：MOSFET N-CH 50V 200MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f5dc5b205292 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 200MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.75V, 5V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138LT7G

Overview

The BSS138LT7G is a single N-channel logic level enhancement mode field effect transistor manufactured by onsemi. It features a silicon technology construction housed in a miniature SOT-23 surface mount package with three pins. Key electrical parameters include a drain-source breakdown voltage (Vds) of 50 V, a continuous drain current (Id) of 200 mA, and a maximum drain-source on-resistance (Rds(on)) of 3.5 Ohms at Vgs=10 V. The gate-source threshold voltage ranges from 0.85 V to 1.5 V, while the gate-source voltage limits are ±20 V. The device operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 225 mW.

Feature Summary

Logic level operation enabled by low gate-source threshold voltage for compatibility with low-voltage control signals
Miniature SOT-23 surface mount package design optimized for board space conservation
Enhancement mode N-channel configuration suitable for general-purpose switching applications

Applications

Low voltage signal switching circuits
Level shifting interfaces between different logic families
General purpose small-signal switching in portable devices

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm manufacturing date codes and lot traceability against official onsemi documentation. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet. Validate that the received parts match the exact suffix LT7G to guarantee package and reel specifications align with design requirements.

Selection Notes

Select this component when a compact N-channel MOSFET is required for low-current switching tasks. The low threshold voltage makes it appropriate for systems driven by 1.8 V or 3.3 V logic sources. Consider the 3.5 Ohm on-resistance for power loss calculations in high-frequency switching scenarios. Ensure the SOT-23 footprint matches the PCB layout constraints.

Part Context

This part belongs to the BSS138L series of small signal MOSFETs from onsemi. It is designed as a cost-effective solution for basic switching needs where minimal board area is critical. The series is widely used in consumer electronics and industrial control boards requiring reliable low-power transistor switching capabilities.