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Product Detailed Parameters
- Description：MOSFET N-Channel Single 60V 230m
- Series：-
- Mfr：Flip Electronics
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BSS138N H6327 is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 230 mA. Key electrical characteristics include a maximum on-resistance of 2.2 Ohms, a gate-source voltage range of -20 V to +20 V, and a threshold voltage of 1 V. It supports a power dissipation of 360 mW and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel enhancement mode configuration for signal switching applications
- Automotive qualification compliant with AEC-Q100 standards
- Silicon-based construction optimized for low-voltage logic interfacing
Applications
- Level shifting between different voltage domains
- Small-signal switching in automotive electronics
- General-purpose transistor applications requiring high reliability
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets AEC-Q100 requirements if intended for automotive use. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a small-signal N-channel MOSFET with 60V capability is required in an SOT-23-3 footprint. Consider its 2.2 Ohm on-resistance and 230mA current rating for low-power switching tasks. Ensure the application environment falls within the specified -55°C to +150°C operating temperature range.
Part Context
This part belongs to the BSS138 series of small-signal MOSFETs from Infineon Technologies. It is designed for general-purpose switching and level-shifting applications. The H6327 suffix typically denotes specific packaging or lot coding details defined by the manufacturer.
