BSS138P,215

Overview

The BSS138P,215 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within a TO-236AB (SOT23) plastic surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 360 mA at 25 °C. The device exhibits a maximum on-state resistance of 1.6 Ω at VGS = 10 V and ID = 300 mA. Gate-source voltage limits are ±20 V, with a threshold voltage typically between 0.9 V and 1.5 V. Total gate charge is approximately 0.72 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Very fast switching performance enabled by Trench MOSFET technology
• Qualified according to AEC-Q101 automotive standards

Applications

• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a compact N-channel switch with low threshold voltage is required. The TO-236AB package suits space-constrained designs. Ensure thermal management accounts for the specified power dissipation limits under ambient conditions. Verify that the application voltage does not exceed the 60 V drain-source rating.

Part Context

This part belongs to Nexperia's small signal MOSFET portfolio. It utilizes Trench technology to achieve low on-resistance in a standard SOT23 footprint. The product is designed for general-purpose switching applications where size and switching speed are critical factors.

Replacement Considerations

Check pinout compatibility with existing layouts. Verify that substitute devices meet or exceed the 60 V breakdown voltage and 360 mA current requirements. Confirm equivalent RDS(on) specifications to maintain circuit efficiency.