BSS138PS,115

Overview

The BSS138PS,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within an SOT363 (SC-88) plastic surface-mounted package. It provides two independent channels with a drain-source voltage of 60 V and continuous drain current of 320 mA per transistor at 25 °C. The device features a maximum on-state resistance of 1.6 Ω at VGS = 10 V and gate-source voltage limits of ±20 V. Total power dissipation reaches 420 mW at 25 °C ambient temperature.

Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Very fast switching performance enabled by advanced Trench MOSFET technology
• Qualified to AEC-Q101 automotive standards for reliability

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space-constrained designs require dual N-channel functionality in a minimal footprint. The SOT363 package supports high-density mounting. Ensure thermal management accounts for the 420 mW total dissipation limit under expected operating conditions.

Part Context

This part belongs to Nexperia's BSS138 series of small-signal MOSFETs. While single-channel variants like the NX138 exist, the PS variant specifically integrates two channels into one compact package, offering design flexibility for differential or dual-load applications without increasing board area.

Replacement Considerations

Direct functional substitutes include the BSS138BKS, which shares identical electrical characteristics and packaging but may differ in manufacturing origin or specific qualification status. Verify pinout compatibility before substitution.

FAQ

What is the maximum peak drain current capability?

The device supports a peak drain current of 1.2 A under single-pulse conditions with a duration of 10 μs or less.

Is this component suitable for automotive applications?

Yes, the BSS138PS is qualified in accordance with the AEC-Q101 stress test qualification standard for discrete semiconductors.

How does the on-state resistance vary with gate voltage?

The RDS(on) decreases as gate-source voltage increases; it is specified as a maximum of 1.6 Ω at VGS = 10 V and 12 Ω at VGS = 5 V.