BSS138PW,115

$0.20

Description：MOSFET N-CH 60V 320MA SOT323
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:14441d7849c0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 320MA SOT323
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：260mW (Ta), 830mW (Tc)
Operating Temperature：-55°C ~ 150°C (TA)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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BSS138PW,115

Overview

The BSS138PW,115 is a single N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology and is housed in a SOT323 (SC-70) surface-mounted plastic package with three leads. The device supports a drain-source voltage of 60 V and a continuous drain current of 320 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 1.6 Ω at VGS = 10 V and a gate-source threshold voltage ranging from 0.9 V to 1.5 V. It operates within an ambient temperature range of -55 °C to +150 °C.

Feature Summary

Logic-level compatible for direct interface with standard logic outputs
Very fast switching performance enabled by Trench MOSFET technology
Qualified according to AEC-Q101 automotive standards

Applications

Relay driver circuits
High-speed line drivers
Low-side loadswitch applications
General switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a compact N-channel MOSFET is required for low-voltage signal switching or logic level translation. The SOT323 package is suitable for space-constrained designs. Ensure the application voltage does not exceed the 60 V drain-source rating and that the gate drive voltage aligns with the logic-level compatibility requirements for optimal on-state resistance performance.

Part Context

This part belongs to the Nexperia BSS138 series of small-signal N-channel MOSFETs. While other variants exist in different packages such as SOT23 or SC-88, the BSS138PW specifically denotes the SC-70 form factor. It serves as a general-purpose switching device within the discrete semiconductor portfolio, distinct from power MOSFETs designed for high-current motor control or power supply applications.

Replacement Considerations

Direct substitutes include BSS138PS,115 (SOT363 package) and BSS138P,215 (TO-236AB/SOT23 package). Verify pinout compatibility and thermal characteristics when substituting between different package types.