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Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS138W-7-F-79 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 200 mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.5 Ohms at 10 V gate drive and 200 mA drain current. Power dissipation is rated at 200 mW. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-323 surface-mount package.
Feature Summary
- N-channel enhancement mode silicon MOSFET technology
- Compact SOT-323 surface-mount packaging for space-constrained designs
- High thermal stability with extended operating temperature range
Applications
- Low-side switching applications
- Level shifting circuits
- Load switch implementations
Procurement Notes
Verify the specific suffix '-79' against official Diodes Incorporated documentation, as standard listings typically use '-7' or '-7-F'. Confirm RoHS compliance status directly from the manufacturer datasheet, as some variants may differ. Ensure the SOT-323 package matches the design footprint requirements before procurement.
Selection Notes
Select this component for low-power signal switching where a 50 V breakdown voltage is sufficient. The 200 mA current rating suits general-purpose logic level translation. Compare Rds(on) specifications against alternative packages like SOT-23 if higher power dissipation capabilities are required for the specific application thermal environment.
Part Context
This part belongs to the BSS138 series of small-signal N-channel MOSFETs. It shares core electrical characteristics with the BSS138W-7 and BSS138W-7-F but utilizes specific tape-and-reel packaging configurations indicated by the suffix. It serves as a compact alternative to larger transistor packages for portable electronics.
Replacement Considerations
Direct substitutes include BSS138W-7-F and BSS138TA. Verify pinout compatibility and exact Rds(on) limits when cross-referencing with other manufacturers' equivalents such as PJC138L_R1_00001.
