BSS138W-7-F

$0.20

Description：MOSFET N-CH 50V 200MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0da61d196930 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 200MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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BSS138W-7-F

Overview

The BSS138W-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 200 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 3.5 Ω at Vgs = 10 V. Total power dissipation is rated at 200 mW, with a thermal resistance junction-to-ambient of 625 °C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Features low gate threshold voltage and low input capacitance.
Totally lead-free and fully RoHS compliant; halogen- and antimony-free green device.

Applications

Load Switch
High efficiency power management

Procurement Notes

Verify the exact part number against official manufacturer documentation before procurement. Confirm that the SOT323 package dimensions match your PCB footprint requirements. Ensure compliance with environmental directives such as RoHS 3 and REACH if applicable to your region. Check for automotive-grade variants like the BSS138WQ if specific quality standards are required.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is needed for load switching or power management. Consider the 200 mA continuous current limit and 200 mW power dissipation constraints. Evaluate the 3.5 Ω Rds(on) at 10 V gate drive to ensure compatibility with your logic levels. Verify thermal management capabilities within the specified operating temperature range.

Part Context

This component belongs to the BSS138W series of N-channel enhancement mode MOSFETs. It utilizes a SOT323 surface-mount case constructed from molded plastic with a UL 94V-0 flammability rating. The terminals feature a matte tin finish annealed over an alloy 42 leadframe, ensuring solderability per MIL-STD-208.