BSS138W E6327

$0.05

Description：MOSFET N-CH 60V 280MA SOT323-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:86ae06226f08 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSS138W E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 280MA SOT323-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS138W E6327

Description：MOSFET N-CH 60V 280MA SOT323-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for BSS138W E6327

BSS138W E6327

Single FETs, MOSFETs Overview

The BSS138W E6327 is a single N-channel enhancement mode small signal MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 280 mA at 25°C. Key electrical parameters include a maximum on-resistance of 2.1 Ohms, a gate threshold voltage of 1 V, and a typical gate charge of 1 nC. It supports a wide operating temperature range from -55°C to +150°C with a power dissipation capacity of 500 mW.

Single FETs, MOSFETs Feature Summary

Small signal design optimized for low-power switching applications
AEC-Q100 qualified for automotive reliability standards
Enhancement mode operation with low gate charge for efficient driving

Single FETs, MOSFETs Applications

Level shifting in digital communication circuits
Load switching for low-power peripherals
General purpose amplification in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E6327 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q100 requirements if deployed in automotive environments. Cross-reference the datasheet version to validate thermal resistance and switching time parameters prior to final integration.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel switch is required for signals up to 60 V. The SOT-323-3 package suits space-constrained designs. Compare the 2.1 Ohm on-resistance against load requirements to ensure acceptable conduction losses. Verify that the 280 mA current limit aligns with the intended application duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the BSS138 series of small signal MOSFETs. It shares functional similarities with the BSS138N but differs in physical packaging. The W suffix typically denotes the SOT-323 form factor, distinguishing it from the SOT-23 variant. This series is widely used in portable devices due to its small footprint and adequate switching performance.