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Product Detailed Parameters
- Description：NCH 60V 310MA, SOT-323, SMALL SI
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 310mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：15 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS138WAHZGT106 is a single N-channel small signal MOSFET manufactured by ROHM Semiconductor. It utilizes the UMT3 (SOT-323) surface-mount package and operates with a drain-source voltage of 60V and a continuous drain current of 310mA. The device features a maximum on-state resistance of 2.4Ω at VGS=10V and supports an ultra-low voltage drive capability at 2.5V. It includes integrated ESD protection rated up to 2kV (HBM), complies with AEC-Q101 automotive standards, and offers fast switching characteristics suitable for low-power applications.
Feature Summary
- Ultra-low voltage drive capability supporting operation at 2.5V gate-source voltage
- Integrated electrostatic discharge (ESD) protection rated up to 2kV under Human Body Model conditions
- Fast switching performance optimized for high-speed circuit applications
- Automotive-grade reliability compliant with AEC-Q101 qualification standards
Applications
- Switching circuits
- Low-side load switches
- Relay drivers
Procurement Notes
Verify that the specific ordering suffix matches the required packaging configuration, as variations exist between tape-and-reel quantities and cut-tape formats. Confirm compliance with RoHS and Halogen-Free requirements during component sourcing. Ensure storage conditions adhere to humidity barrier bag protocols to maintain solderability before assembly.
Selection Notes
Select this component when designing circuits requiring compact SOT-323 footprints with robust ESD tolerance. Evaluate thermal derating curves if operating near the maximum junction temperature limit of 150°C. Consider the 2.4Ω maximum RDS(on) for power loss calculations in continuous conduction modes versus pulsed current requirements.
Part Context
This part belongs to the BSS138 series of N-channel enhancement mode MOSFETs from ROHM. It shares functional similarities with other members like the BSS138BKT116 but differs in physical package dimensions and specific electrical tolerances defined by the UMT3 form factor. The WAHZG designation indicates automotive-grade qualification and specific lead plating specifications.
Replacement Considerations
Cross-reference with BSS138BKWT106 or BSS138BKT116 for pin-compatible alternatives within the same manufacturer family. Verify that substitute components meet identical AEC-Q101 reliability standards and match the 60V/310mA rating profile.
