BSS138WH6327XTSA1

Single FETs, MOSFETs Overview

The BSS138WH6327XTSA1 is an N-channel enhancement mode logic level small-signal MOSFET from Infineon's SIPMOS series. It features a 60 V drain-source breakdown voltage and a continuous drain current of 0.28 A at 25 °C. The device utilizes a PG-SOT-323 surface-mount package with Pb-free lead plating. Key electrical characteristics include a maximum on-state resistance of 3.5 Ω, a gate threshold voltage range of 0.6 V to 1.4 V, and a typical total gate charge of 1.0 nC. It supports a power dissipation of 0.50 W and operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Enhancement mode operation optimized for logic-level switching applications
• High dv/dt rating capability for fast transient response
• ESD protection compliant with JESD22-A114-HBM Class 0 standards
• Qualified according to AEC-Q101 automotive reliability standards

Single FETs, MOSFETs Applications

• Logic level signal switching in digital circuits
• Small-signal amplification stages
• Battery management system switches
• General-purpose low-power electronic switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging quantity and tape-and-reel specifications. Ensure compliance with RoHS directives and halogen-free requirements as stated in the datasheet. Confirm that the PG-SOT-323 footprint matches your PCB design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low gate charge and high dv/dt tolerance is required. The 60 V rating suits low-voltage logic interfaces. Evaluate thermal performance based on the 250 K/W junction-to-ambient resistance if operating without a minimal copper footprint. Consider the ESD class 0 rating for sensitive input protection scenarios.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient switching in space-constrained designs. The BSS138W variant specifically targets applications requiring robust performance in a tiny SOT-323 package. It complements other small-signal devices by offering enhanced durability and simplified integration into modern consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains the PG-SOT-323 footprint, 60 V rating, and N-channel enhancement mode characteristics. Verify that alternative parts meet the same AEC-Q101 qualification and ESD protection levels if used in automotive or high-reliability contexts.

Single FETs, MOSFETs FAQ

What is the maximum dv/dt rating for the reverse diode?

The device supports a reverse diode dv/dt rating of 6 kV/µs under specified test conditions.

Is the BSS138WH6327XTSA1 halogen-free?

Yes, the component is certified as halogen-free according to IEC61249-2-21 standards.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(th)) ranges from a minimum of 0.6 V to a maximum of 1.4 V.