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The BSS138WQ-7-F is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 280mA at +25°C. The device exhibits a static drain-source on-resistance of 3.5Ω maximum at VGS=10V. It operates within a temperature range of -55°C to +150°C junction temperature. Packaged in an SOT323 case, it is supplied in tape and reel quantities of 3,000 units.
Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification standards if utilized in automotive contexts. Ensure the SOT323 package dimensions align with the target PCB footprint layout constraints.
Select this component when a small surface-mount N-channel MOSFET is required for low-voltage switching applications. The SOT323 package offers space efficiency for dense circuit designs. Consider the 3.5Ω on-resistance limit for power dissipation calculations under steady-state conditions. Verify compatibility with the intended gate drive voltage levels for optimal performance.
This part belongs to the BSS138WQ series from Diodes Incorporated. It is designed specifically to meet stringent automotive industry requirements. The product is manufactured in IATF 16949 certified facilities. It serves as a specialized variant within the broader BSS138 family of MOSFETs.
Direct substitutes include BSS138WQ-13-F, which shares identical electrical specifications but utilizes a 10,000-unit tape and reel packaging format. Other BSS138 variants may offer different packaging or slight parameter variations requiring verification.
Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive use.
The maximum operating junction temperature is +150°C.