BSS138WT106

$0.31

Description：NCH 60V 310MA, SOT-323, SMALL SI
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:eec070efdee6 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：NCH 60V 310MA, SOT-323, SMALL SI
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：2.4Ohm @ 310mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：15 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UMT3
Package / Case：SC-70, SOT-323

Download product information

BSS138WT106

Overview

The BSS138WT106 is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes the UMT3 (SOT-323) surface-mount package and operates with a drain-source breakdown voltage of 60V and a continuous drain current of 310mA. The device features a typical on-resistance of 2.4 Ohms at Vgs=2.5V, with a gate-source voltage range of ±20V and a threshold voltage of 2.3V. Power dissipation is rated at 300mW, supporting an operating temperature range from -55°C to +150°C.

Feature Summary

Supports low-voltage driving with a specified drive voltage of 2.5V for efficient control in logic-level applications.
Integrates ESD protection capabilities within the compact SOT-323 package to safeguard sensitive circuitry.
Designed for rapid switching performance, suitable for high-speed signal processing and load management tasks.

Applications

Switching circuits requiring compact form factors
Low-side load switch implementations
Relay driver applications

Procurement Notes

Verify component authenticity through authorized distribution channels to ensure compliance with RoHS standards and lead-free plating requirements. Confirm that the specific ordering suffix matches the required reel or cut tape packaging configuration for your assembly line. Validate that the device status remains recommended for new designs before finalizing procurement plans.

Selection Notes

Select this component when a small-signal N-channel MOSFET with 60V rating and UMT3 footprint is required. Ensure the application voltage does not exceed the 20V gate-source limit. Consider the thermal constraints imposed by the 300mW power dissipation rating in enclosed environments.

Part Context

This part belongs to the BSS138 series of small-signal MOSFETs produced by ROHM Semiconductor. It represents a standard-grade discrete transistor designed for general-purpose electronic equipment. The product is explicitly noted as not recommended for use in automotive devices, distinguishing it from the manufacturer's specialized automotive-grade lines.

Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Cross-referencing with similar pinout and package variants is necessary to ensure functional compatibility without redesigning the host circuit board.