BSS139 E6327

$0.15

Description：MOSFET N-CH 250V 100MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:5f28b7176911 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 100MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：14Ohm @ 0.1mA, 10V
Vgs(th) (Max) @ Id：1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS139 E6327

Overview

The BSS139 E6327 is an N-channel depletion mode MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 250 V and a continuous drain current of 100 mA at 25°C. The device operates within a temperature range of -55°C to +150°C and dissipates up to 360 mW. It utilizes a SOT-23-3 surface-mount package and holds AEC-Q101 automotive qualification.

Feature Summary

N-channel depletion mode operation providing normally-on functionality for constant current applications
High drain-source voltage rating suitable for robust switching environments
Automotive-grade reliability certified under AEC-Q101 standards

Applications

Industrial control systems requiring high-voltage small-signal switching
Consumer electronics utilizing compact surface-mount designs
Constant current source circuits leveraging zero-gate-voltage conduction

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the specific E6327 suffix matches project requirements, as ordering suffixes may indicate variations in tape-and-reel specifications or packaging configurations without altering electrical function. Ensure compliance with RoHS directives prior to integration.

Selection Notes

Select this component when a normally-on N-channel configuration is required for high-voltage signal paths. The 250 V rating distinguishes it from standard low-voltage logic-level alternatives. Consider the negative threshold voltage characteristics for biasing networks and ensure the SOT-23-3 footprint aligns with existing PCB layout constraints.

Part Context

This part belongs to Infineon's SIPMOS series of small-signal MOSFETs. It represents a specialized depletion-mode variant designed for applications where the transistor remains conductive at zero gate-source voltage. This contrasts with enhancement-mode devices that require positive gate drive to turn on.